A High-Linearity Modified Uni-Traveling Carrier Photodiode With Offset Effects of Nonlinear Capacitance
Journal of Lightwave Technology, Vol. 27, Issue 20, pp. 4435-4439
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Citation
Huapu Pan, Andreas Beling, Hao Chen, Joe C. Campbell, and P.
D. Yoder, "A High-Linearity Modified Uni-Traveling Carrier Photodiode With Offset Effects of Nonlinear Capacitance," J. Lightwave Technol. 27, 4435-4439 (2009)
http://www.opticsinfobase.org/JLT/abstract.cfm?URI=JLT-27-20-4435
Abstract
Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup. Plots of the third-order local intercept point (IP3) versus photocurrent exhibit peaks. A simple analytical model is developed which explains that the peaks are due to the interaction of voltage-dependent and photocurrent-dependent capacitance effects.
© 2009 IEEE
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