Far-field behavior of injection-locked semiconductor laser arrays

Myung K. Chun; T. L. Whitman; D. G. Soenksen

doi:10.1364/AO.26.004518

Applied Optics
Vol. 26,
Issue 21,
pp. 4518-4521
(1987)
•https://doi.org/10.1364/AO.26.004518

Far-field behavior of injection-locked semiconductor laser arrays

Myung K. Chun, T. L. Whitman, and D. G. Soenksen

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Myung K. Chun, T. L. Whitman, and D. G. Soenksen, "Far-field behavior of injection-locked semiconductor laser arrays," Appl. Opt. 26, 4518-4521 (1987)

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Abstract

We have developed a computer model of injection-locked gain-guided semiconductor arrays to explain some experimental observations: the creation of a single-lobed far field from a normally double-lobed far field; the increase in the divergence angle of the far-field lobe(s); the shifting of power from one off-axis lobe to the other; and the regression back to a double-lobed far field when the ratio between array power and injection power becomes too large. The model is then extrapolated to look at properties of the index-guided case: inefficient end-element injection but an on-axis single-lobed center-element injection.

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Cavity Length (cm)	= 250.E−4
Cavity Width (cm)	= 105.E−4
Number of Array Channels	= 5
Channel: 1 Width (cm) = 6.E−4 Center (cm)	= 32. 5E−4
Channel: 2 Width (cm) = 6.E−4 Center (cm)	= 42. 5E−4
Channel: 3 Width (cm) = 6.E−4 Center (cm)	= 52. 5E−4
Channel: 4 Width (cm) = 6.E−4 Center (cm)	= 62. 5E−4
Channel: 5 Width (cm) = 6.E−4 Center (cm)	= 72.5E−4
Active Layer Thickness (cm)	= 0.2E−4
P–Layer Thickness (cm)	= 2.E−4
Cladding Layer Thickness (cm)	= 0.2E−4
Active Layer Refractive Index	= 3.59
Cladding Layer Refractive Index	= 3.35
Effective Refractive Index	= 3.46038
Confinement Factor	= 0.6711
Index variation for index guiding	= 0.
Antiguiding Parameter	= 2.
Nonradiative Recombination Time (sec)	= 0.50000E−08
P–layer Resistivity (ohm–cm**2)	= 0.20000E+00
Contact Resistivity (ohm–cm**2)	= 0.1000OE−04
Free Carrier Absorption Coefficient (cm**2)	= 0.60000E−17
Passive Layer Absorption Coefficient (1/cm)	= 0.10000E+02
Spontaneous Recombination Coeff. (cm**3/sec)	= 0.14000E−09
Auger Coefficient (cm**6/sec)	= 0.10000E−29
Effective Diffusion Constant (cm**2/sec)	= 0.33000E+02
Reflectivity in between stripes at z=0	= 0.998000E+00
Reflectivity in between stripes at z=L	= 0.320000E+00
Gain Parameter a (cm**2)	= 0.15000E−15
Gain Parameter b (1/cm)	= 0.l0000E+03
Conduction Band Density of States (1/cm**3)	= 0.43500E+18
Valence Band Density of States (1/cm**3)	= 0.83100E+19
Fermi Correction Factor	= 0.35355E+00

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Applied Optics