Abstract

SPRITE (signal processing in the element) detectors are three-contact photoconductive structures made of HgCdTe, in which a time-delay-and-integration function is performed in the detector element itself without the need for external circuitry. Spatial frequency-dependent expressions are developed for the modulation transfer function and the number of equivalent elements N_eq of the SPRITE. The development is based on a Green’s function method, which accounts for carrier generation, recombination, and diffusion processes. The usual low-frequency approach of defining a square resolution element on the SPRITE is avoided. The resulting expressions are functions of spatial frequency and are also dependent on physical variables such as the length of the SPRITE element, carrier lifetime, carrier mobility, and operating voltage. These expressions are then applied to the design of a SPRITE element, optimized for operation over a particular range of spatial frequencies.

© 1988 Optical Society of America

Modulation-transfer function measurement of SPRITE detectors: sine-wave response

Kenneth J. Barnard, Glenn D. Boreman, Allen E. Plogstedt, and Barry K. Anderson
Appl. Opt. 31(1) 144-147 (1992)

Resolution-equivalent D* for SPRITE detectors

Per Fredin and Glenn D. Boreman
Appl. Opt. 34(31) 7179-7182 (1995)

Modulation-transfer-function-enhanced readout for SPRITE detectors

Frank J. Effenberger and Glenn D. Boreman
Appl. Opt. 35(7) 1022-1024 (1996)

Modal analysis of transport processes in SPRITE detectors

Frank J. Effenberger and Glenn D. Boreman
Appl. Opt. 34(22) 4651-4661 (1995)

Spatial filtering by a line-scanned nonrectangular detector: application to SPRITE readout MTF

Glenn D. Boreman and Allen E. Plogstedt
Appl. Opt. 28(6) 1165-1168 (1989)