Abstract

Silicon nitride films were synthesized in a Balzers BAP 800 coating plant by low voltage reactive ion plating. Transparent, stoichiometric films free of hydrogen, oxygen, argon, and heavy metals were obtained. The properties of the silicon nitride films were investigated in terms of optical constants, chemical composition, and hydrogen content.

© 1989 Optical Society of America

Effects of bombardment on optical properties during the deposition of silicon nitride by reactive ion-beam sputtering

M. F. Lambrinos, R. Valizadeh, and J. S. Colligon
Appl. Opt. 35(19) 3620-3626 (1996)

Reactive ion assisted deposition of aluminum oxynitride thin films

Chang Kwon Hwangbo, Linda J. Lingg, John P. Lehan, H. Angus Macleod, and F. Suits
Appl. Opt. 28(14) 2779-2784 (1989)

Comparative study of titanium dioxide thin films produced by electron-beam evaporation and by reactive low-voltage ion plating

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Effect of high-energy electron-beam irradiation on the optical properties of ion-beam-sputtered silicon oxynitride thin films

Shivaprasad Karanth, Ganesh H. Shanbhogue, and C. L. Nagendra
Appl. Opt. 44(29) 6186-6192 (2005)

Optical properties and stress of ion-assisted aluminum nitride thin films

Philip Martin, Roger Netterfield, Terry Kinder, and Avi Bendavid
Appl. Opt. 31(31) 6734-6740 (1992)