Abstract

We describe a 6 × 6 array of electrically addressed field-effect-transistor self-electro-optic-effect-device differential modulators in which each element has a single-stage amplifier to permit an input voltage of less than 1 V to control the output modulators, which can operate at as high as 10 V. The variations in the switching voltages across the array are less than ±70 mV, and the individual array elements are operated at as high as 2 Gbits/s. We also measure cross talk between adjacent elements within the array, measure the dependence of the switching time on the input voltage swing, and calculate the dependence of the switching time that is due to the photocurrent of the modulators.

© 1994 Optical Society of America

Five-stage free-space optical switching network with field-effect transistor self-electro-optic-effect-device smart-pixel arrays

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Tolerance analysis of cascaded self-electro-optic-effect-device arrays

Marc P. Y. Desmulliez, Brian S. Wherrett, and John F. Snowdon
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Relationships between speed and tolerances for self-electro-optic-effect devices

Anthony L. Lentine and Frank A. P. Tooley
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