Abstract

A technique to map the spectral uniformity of luminescent semiconducting materials at room temperature is described. This technique is based on spatially resolved and polarization-resolved measurements of the photoluminescence and requires a polarizing beam splitter with a splitting ratio that has a linear dependence on wavelength. Measurements on a quantum-well sample that was patterned by intermixing with a focused ion beam are used to demonstrate the technique. With a spectral resolution of better than 1 nm and a spatial resolution of ≃1 μm, as well as the ability to map concurrently the strain field through the measurement of the degree of polarization of the photoluminescence and the photoluminescence yield, this technique provides a simple, nondestructive method of assessing luminescent materials.

© 1995 Optical Society of America

Strain mapping by measurement of the degree of polarization of photoluminescence

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