Abstract
Techniques for measurement of higher-order aberrations of a projection optical system in photolithographic exposure tools have been established. Even-type and odd-type aberrations are independently obtained from printed grating patterns on a wafer by three-beam interference under highly coherent illumination. Even-type aberrations, i.e., spherical aberration and astigmatism, are derived from the best focus positions of vertical, horizontal, and oblique grating patterns by an optical microscope. Odd-type aberrations, i.e., coma and three-foil, are obtained by detection of relative shifts of a fine grating pattern to a large pattern by an overlay inspection tool. Quantitative diagnosis of lens aberrations with a krypton fluoride (KrF) excimer laser scanner is demonstrated.
© 2000 Optical Society of America
Full Article | PDF ArticleMore Like This
Hiroshi Nomura and Takashi Sato
Appl. Opt. 38(13) 2800-2807 (1999)
Jinwon Sung, Mahesh Pitchumani, and Eric G. Johnson
Appl. Opt. 42(11) 1987-1995 (2003)
Mingying Ma, Xiangzhao Wang, and Fan Wang
Appl. Opt. 45(32) 8200-8208 (2006)