Abstract
An infrared polariscope was constructed for photoelastic stress analysis of semiconductor materials transmitting in the 0.7 μ to 1.2 μ spectral region. The instrument which functions as either a plane or circular polariscope permits specimens up to 40-mm diam to be studied in collimated radiation. Glan–Thompson prisms are used for the polarizer and analyzer, and the associated quarter-wave plates are made of quartz. An infrared image-converter tube is used to observe the stress patterns produced by induced and frozenin stresses of specimens. A mechanical stage provides for rotary motion and lateral displacement of the specimen in two mutually perpendicular directions in a plane normal to the optical axis of the polariscope, and also allows the specimen to be stressed by a calibrated mechanical load. A material fringe value of 27 kg-cm−1 fringe−1 was determined for silicon and used to estimate residual stresses in a boule of silicon. Photographs of isoclinic and isochromatic fringe patterns at a wavelength of 1.1 μ are presented.
© 1965 Optical Society of America
Full Article | PDF ArticleMore Like This
P. A. A. Magalhães Júnior, F. G. Vieira, C. A. Magalhães, J. S. Ribeiro, and I. G. Rios
Opt. Express 24(12) 12617-12624 (2016)
J. A. Quiroga and A. González-Cano
Appl. Opt. 36(32) 8397-8402 (1997)
Peatul K. Ajmera, Burke Huner, Aloke K. Dutta, and Craig S. Hartley
Appl. Opt. 27(4) 752-757 (1988)