Abstract

Extreme ultraviolet (EUV) lithography uses reflective ring-field projection systems. Geometrical obstruction limits the possible system configurations to small domains of the parameter space. We present an analysis, a search method, and a classification of these unobstructed domains. The exhaustive search method based on paraxial analysis provides an effective means for determining all possible design forms and for finding useful starting configurations for optimization. The approach is validated through comparison with finite ray tracing.

© 2003 Optical Society of America

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