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High reflectivity multilayer for He-II radiation at 30.4 nm

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Abstract

SiC∕Mg and B4C∕Mo∕Si multilayers were designed for He-II radiation at 30.4 nm. These multilayers were prepared by use of a direct current magnetron sputtering system and measured at the National Synchrotron Radiation Laboratory, China. The measured reflectivities were 38.0% for the SiC∕Mg multilayer at an incident angle of 12 deg and 32.5% for the B4C∕Mo∕Si multilayer at 5 deg, respectively. A dual-function multilayer mirror was also designed by use of the aperiodic SiC∕Mg multilayer. Annealing experiments were performed to investigate the thermal stability of the SiC∕Mg multilayer. The interface of the SiC∕Mg multilayer before and after annealing was studied by electron-induced x-ray emission spectra, which evidences the absence of thermal reaction products at the interfaces after annealing.

© 2008 Optical Society of America

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