Abstract

We propose a new numerical model to analyze heat induced by two-photon absorption and free-carrier absorption, while high intensity optical pulses propagate along silicon-on-insulator (SOI) nanowaveguides (NWGs). Using this model, we demonstrate that such induced heat causes a shift in the amount of wavelength conversion and hence deteriorates the converter output characteristics for pulses in the picosecond regime. The wavelength shift induced by a pulse with maximum input intensity and full width at half-maximum of $I_{\max }=1.5\times {10}^{10}\mathrm{W}.{\mathrm{cm}}^{-2}$ and $T_{\text{FWHM}}=30\mathrm{ps}$, propagating along a SOI NWG with an effective cross-sectional area of $a_{\text{eff}}=0.15{\mathrm{\mu m}}^2$, is shown to be $\mathrm{\Delta }{\lambda }_s\approx 8\mathrm{pm}$. We also demonstrate that such a shift can be compensated by tuning the pump intensity down by approximately 6.33%.

© 2009 Optical Society of America

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