Spectroscopic ellipsometry analysis of silicon nanotips obtained by electron cyclotron resonance plasma etching

Arturo Mendoza-Galván; Kenneth Järrendahl; Hans Arwin; Yi-Fan Huang; Li-Chyong Chen; Kuei-Hsien Chen

doi:10.1364/AO.48.004996

Applied Optics
Vol. 48,
Issue 26,
pp. 4996-5004
(2009)
•https://doi.org/10.1364/AO.48.004996

Spectroscopic ellipsometry analysis of silicon nanotips obtained by electron cyclotron resonance plasma etching

Arturo Mendoza-Galván, Kenneth Järrendahl, Hans Arwin, Yi-Fan Huang, Li-Chyong Chen, and Kuei-Hsien Chen

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
Arturo Mendoza-Galván, Kenneth Järrendahl, Hans Arwin, Yi-Fan Huang, Li-Chyong Chen, and Kuei-Hsien Chen, "Spectroscopic ellipsometry analysis of silicon nanotips obtained by electron cyclotron resonance plasma etching," Appl. Opt. 48, 4996-5004 (2009)

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Related Topics
Table of Contents Category
- Instrumentation, Measurement, and Metrology
Optics & Photonics Topics
?

The topics in this list come from the Optics and Photonics Topics applied to this article.

About this Article
History
- Original Manuscript: April 23, 2009
- Revised Manuscript: August 3, 2009
- Manuscript Accepted: August 24, 2009
- Published: September 3, 2009

Abstract

Silicon nanotips fabricated by electron cyclotron resonance plasma etching of silicon wafers are studied by spectroscopic ellipsometry. The structure of the nanotips is composed of columns $100 - 140 nm$ wide and spaced by about $200 nm$ . Ellipsometry data covering a wide spectral range from the midinfrared to the visible are described by modeling the nanotip layer as a graded uniaxial film using the Bruggeman effective medium approximation. The ellipsometry data in the infrared range reveal two absorption bands at 754 and $955 {cm}^{- 1}$ , which cannot be resolved with transmittance measurements. These bands indicate that the etching process is accompanied with formation of carbonaceous SiC and ${CH}_{n}$ species that largely modify the composition of the original crystalline silicon material affecting the optical response of the nanotips.

Full Article | PDF Article

More Like This

Porosity depth profiling of thin porous silicon layers by use of variable-angle spectroscopic ellipsometry: a porosity graded-layer model

Leif A. A. Pettersson, Lars Hultman, and Hans Arwin
Appl. Opt. 37(19) 4130-4136 (1998)

Anisotropic incoherent reflection model for spectroscopic ellipsometry of a thick semitransparent anisotropic substrate

Razvigor Ossikovski, Morten Kildemo, Michel Stchakovsky, and Marcus Mooney
Appl. Opt. 39(13) 2071-2077 (2000)

Detection of thin a-Si:H antireflective coatings on oxidized c-Si by resonant-detected spectroscopic ellipsometry

J. C. Jans and J. W. Gemmink
Appl. Opt. 32(1) 84-90 (1993)

Previous Article Next Article

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Figures (8)

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Tables (2)

You do not have subscription access to this journal. Article tables are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Equations (7)

You do not have subscription access to this journal. Equations are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

	c-Si		J-M
Sublayer	D (nm)	$f_{v}$ (%)	d (nm)	$f_{v}$ (%)
L-5	$65.6 \pm 1.2$	$92.3 \pm 0.4$	$105.2 \pm 1.5$	$96.5 \pm 0.1$
L-4	$473.1 \pm 1.2$	$70.3 \pm 0.1$	$494.6 \pm 1.6$	$70.3 \pm 0.1$
L-3	$113.5 \pm 0.9$	$59.4 \pm 0.2$	$133.4 \pm 1.0$	$59.3 \pm 0.2$
L-2	$65.9 \pm 0.5$	$36.9 \pm 0.4$	$75.6 \pm 1.3$	$24.6 \pm 0.2$
L-1	$48.5 \pm 0.5$	$12.5 \pm 0.4$	$34.2 \pm 1.9$	$3.3 \pm 0.5$
	$MSE = 20.51$		$MSE = 9.35$

Jellison–Modine	Gaussian
$A = 58.2 \pm 1.9 eV$	$A_{1} = 11.3 \pm 0.1$
$E_{0} = 1.93 \pm 0.01 eV$	$E_{c 1} = 754.4 \pm 1.3 {cm}^{- 1}$
$C = 1.65 \pm 0.06 eV$	$B_{1} = 168.1 \pm 3.3 {cm}^{- 1}$
$E_{g} = 1.04 \pm 0.01 eV$	$A_{2} = 3.5 \pm 0.1$
$ε_{\infty} = 4.95 \pm 0.08$	$E_{c 2} = 955.8 \pm 4.3 {cm}^{- 1}$
	$B_{2} = 273.5 \pm 5.7 {cm}^{- 1}$

	c-Si		J-M
Sublayer	D (nm)	$f_{v}$ (%)	d (nm)	$f_{v}$ (%)
L-5	$65.6 \pm 1.2$	$92.3 \pm 0.4$	$105.2 \pm 1.5$	$96.5 \pm 0.1$
L-4	$473.1 \pm 1.2$	$70.3 \pm 0.1$	$494.6 \pm 1.6$	$70.3 \pm 0.1$
L-3	$113.5 \pm 0.9$	$59.4 \pm 0.2$	$133.4 \pm 1.0$	$59.3 \pm 0.2$
L-2	$65.9 \pm 0.5$	$36.9 \pm 0.4$	$75.6 \pm 1.3$	$24.6 \pm 0.2$
L-1	$48.5 \pm 0.5$	$12.5 \pm 0.4$	$34.2 \pm 1.9$	$3.3 \pm 0.5$
	$MSE = 20.51$		$MSE = 9.35$

Jellison–Modine	Gaussian
$A = 58.2 \pm 1.9 eV$	$A_{1} = 11.3 \pm 0.1$
$E_{0} = 1.93 \pm 0.01 eV$	$E_{c 1} = 754.4 \pm 1.3 {cm}^{- 1}$
$C = 1.65 \pm 0.06 eV$	$B_{1} = 168.1 \pm 3.3 {cm}^{- 1}$
$E_{g} = 1.04 \pm 0.01 eV$	$A_{2} = 3.5 \pm 0.1$
$ε_{\infty} = 4.95 \pm 0.08$	$E_{c 2} = 955.8 \pm 4.3 {cm}^{- 1}$
	$B_{2} = 273.5 \pm 5.7 {cm}^{- 1}$

Abstract

Cited By

Figures (8)

Tables (2)

Equations (7)

Applied Optics