Passive millimeter wave imaging sensors for commercial markets

Jonathan J. Lynch; Perry A. Macdonald; Harris P. Moyer; Robert G. Nagele

doi:10.1364/AO.49.0000E7

Applied Optics
Vol. 49,
Issue 19,
pp. E7-E12
(2010)
•https://doi.org/10.1364/AO.49.0000E7

Passive millimeter wave imaging sensors for commercial markets

Jonathan J. Lynch, Perry A. Macdonald, Harris P. Moyer, and Robert G. Nagele

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Jonathan J. Lynch, Perry A. Macdonald, Harris P. Moyer, and Robert G. Nagele, "Passive millimeter wave imaging sensors for commercial markets," Appl. Opt. 49, E7-E12 (2010)

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Abstract

We describe the development of passive millimeter wave imaging sensors, operating at W band, that are currently being manufactured for commercial markets using standard automated assembly processes. A description of HRL Laboratories’ millimeter wave imaging chipset is presented, focusing on parameters that limit sensor performance, such as detector $1 / f$ noise, low noise amplifier noise figure, and gain drift. We conclude with a discussion of ongoing research and development in passive millimeter wave imaging and performance improvements that can be expected for future imaging sensors.

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V, $mV$	$d V / d T$ , $uV / K$	$K (1 / f const)$	$G β$ , $V / uW$	NF, $dB$	BW, $GHz$	NETD, K
1.4	1.8	3.3	4.5	4.4	28	0.29
5.3	7.0	13	14	4.2	35	0.52
5.8	6.9	6.1	20	4.6	23	0.41
0.6	0.52	10	1.1	5.9	33	0.69
3	4.3	5.3	12	3.8	26	0.32

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Applied Optics