Abstract
Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of gas were injected to enhance the optical and electrical properties of the films. The extinction coefficient was lower than in the range from 400 to when the ratio was 0.375. The resistivity of fluorine-doped films () deposited at was 27.9 times smaller than that of undoped (). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was , which increased by less than 39% at a annealing temperature for in air.
© 2010 Optical Society of America
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