Abstract
In this paper, we propose a new amorphous silicon (a-Si:H) thin-film
transistor (TFT) pixel circuit employing negative bias annealing for active-matrix
organic light-emitting diode (AMOLED). This circuit consists of two driving
TFTs, four switching TFTs, and two storage capacitors. The new driving scheme
adopting negative bias annealing entitled polarity balanced driving (PBD)
successfully suppresses the troublesome V<sub>th</sub> shift in a-Si:H TFT. The proposed pixel circuit was verified
by simulation and fabrication. When a severe electrical bias is applied more
than 24 hours and a temperature is increased up to 60 °C rather than a room temperature,
the current stability (I<sub>after_sttress</sub>/I<sub>max</sub>) of the proposed PBD pixel is 0.97
while that of the conventional one is 0.72. Our experimental results show
that the proposed PBD can improve a stability of a-Si:H TFT because the applied
negative gate bias can successfully suppress V<sub>th</sub> shift of the current-driving a-Si:H TFT.
© 2007 IEEE
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