Abstract
In this paper, we report contact resistance analysis between inkjet-printed
silver source–drain (S/D) electrodes and organic semiconductor layer in bottom-contact
organic thin-film transistors (OTFTs) using transmission line method (TLM).
Inkjet-printed silver electrodes, spin-coated PVP and evaporated pentacene were used as
gate and S/D electrodes, gate dielectric layer and semiconductor layer, respectively. On
a common gate electrode, S/D electrodes with various channel length from 15 to 111
μm were printed for TLM analysis. The same bottom-contact OTFT with
evaporated silver S/D electrodes was also fabricated for reference. We extracted contact
resistances of 1.79 MΩ · cm and 0.55
MΩ · cm for inkjet-printed and evaporated silver electrodes,
respectively. Higher contact resistance for inkjet-printed silver electrodes can be
explained in terms of their relatively poor surface properties at electrode edge that
can cause small pentacene molecule grain or slight oxidation of surface during the
printed silver sintering process.
© 2011 IEEE
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