Abstract
A tunable band-selection interleaver filter switch formed on a silicon-on-insulator
(SOI) substrate for dense wavelength-division-multiplexing (DWDM) system was
fabricated, and its fundamental performances were experimentally demonstrated.
The device consists of monolithic integration of a Michelson interferometer
(MI) structure with two arm-waveguides with different lengths, appropriately
designed for ITU-grid separation, a phase-modulation electrode on one arm
and tunable wideband Bragg gratings reflectors. An SOI rib waveguide structure
with a medium mode size was adopted for low loss and easy fabrication. A bandwidth
of the grating, formed by electron beam (EB) lithography and deep reactive-ion
etching (Deep-RIE), was rather large of 4 nm at ${- }$10 dB transmission level, from which a large coupling
coefficient of the Bragg grating of 105 cm$^{-1}$ was evaluated. A large tuning range of the Bragg grating of 17
nm was obtained. An extinction ratio of the interleaver filter was about 18
dB, and the interleaving switching was also attained with an applied electric
power of 50 mW and a switching speed of about 1 ms.
© 2008 IEEE
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