Abstract
We have demonstrated for the first time, to the best of our knowledge, photorefractive two-wave mixing in implanted waveguides in one of the most promising materials for infrared photorefractive applications, the ferroelectric semiconductor . The high optical nonlinearity is preserved after implantation and at the telecommunication wavelength , a maximal two-wave mixing gain of has been measured in Te-doped waveguides. In the nominally pure material an increase of the effective number of traps after implantation has been observed, resulting in an increase of the two-beam coupling gain by a factor of almost 2 in the spectral range. In 1% Te-doped the effect of ion implantation to the photorefractive response is completely different than in pure materials. While the dominant contribution by holes is not considerably affected, a strong, thermally induced charge compensation is observed in the implanted Te-doped waveguides.
© 2009 Optical Society of America
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