Abstract

We passively $Q$ switched a diode-pumped Nd:YVO₄ microchip crystal with an antiresonant Fabry–Perot saturable absorber and achieved single-frequency pulses as short as 56 ps. We can vary the pulse width from 56 ps to 30 ns and the repetition rate from 27 kHz up to 7 MHz by changing the design parameters of the saturable absorber and the pump power.

© 1997 Optical Society of America

Passively Q-switched 1.34-µm Nd:YVO₄ microchip laser with semiconductor saturable-absorber mirrors

R. Fluck, B. Braun, E. Gini, H. Melchior, and U. Keller
Opt. Lett. 22(13) 991-993 (1997)

Passively Q-switched 180-ps Nd:LaSc₃(BO₃)₄ microchip laser

B. Braun, F. X. Kärtner, U. Keller, J.-P. Meyn, and G. Huber
Opt. Lett. 21(6) 405-407 (1996)

InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-µm lasers

H. C. Lai, A. Li, K. W. Su, M. L. Ku, Y. F. Chen, and K. F. Huang
Opt. Lett. 30(5) 480-482 (2005)

Periodically poled lithium niobate optical parametric amplifiers pumped by high-power passively Q-switched microchip lasers

John J. Zayhowski
Opt. Lett. 22(3) 169-171 (1997)

Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers

G. J. Spühler, R. Paschotta, R. Fluck, B. Braun, M. Moser, G. Zhang, E. Gini, and U. Keller
J. Opt. Soc. Am. B 16(3) 376-388 (1999)