Abstract

Epilayers of packaged indium gallium nitride light-emitting diodes (LED’s) are characterized by optical-beam-induced current (OBIC) and photoluminescence laser-scanning microscopy through two-photon excitation. Light scattering and absorption in the packaging material and the $p‐\mathrm{doped}$ top layer of the LED’s are greatly reduced as a result of employing a longer excitation wavelength, with energy that is less than the bandgap of the top $p$ layer. Compared with single-photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on.

© 1999 Optical Society of America

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