Abstract
We study theoretically and demonstrate experimentally light-controllable terahertz reflectivity of high-resistivity semiconductor wafers. Photocarriers created by interband light absorption form a thin conducting layer at the semiconductor surface, which allows the terahertz reflectivity of the element to be tuned between antireflective and highly reflective limits by means of the intensity and wavelength of the optical illumination.
© 2005 Optical Society of America
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