Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

High Two-Wave-Mixing Gain in a Bi12SiO20 Crystal at λ = 633 nm

Not Accessible

Your library or personal account may give you access

Abstract

Strong beam coupling with the net gain of 4000 under an external alternating electric field was observed in a Bi12SiO20 crystal at λ = 633 nm with a response time twice faster than in Bi12TiO20 at the same laser beam intensitiy. Nominally pure Bi12SiO20 crystal was grown by the Czochralski method from stoichiometric melts of Bi2O3 and SiO2 at very low temperature gradients. About 37 % deficiency of silicon in grown crystal was estimated by the optical emission spectroscopy analysis. Significantly higher photorefractive efficiency of our BSO crystal in red and near infrared region of spectrum can be explained by higher concentration of stoichiometric defects due to the silicon deficiency.

© 1999 Optical Society of America

PDF Article
More Like This
Bi12SiO20 and Bi12TiO20 Photorefractive Single Crystals

Victor V. Prokofiev, N. J. Heraldo Gallo, Jesiel F. Carvalho, and Antonio C. Hernandes
ThC.1 Photorefractive Materials, Effects, and Devices II (PR) 1993

Increased holographic recording characteristics and energy transfer in two-wave mixing in doped Bi12SiO20 crystals

Zhang Hongxi, Qiang Liangsheng, and Xu Chongquan
CThS48 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

Photochromic Effect in Bi12SiO20 Crystals

T.V. Panchenko and A.Yu. Kudzin
BP11 Photorefractive Materials, Effects, and Devices II (PR) 1990

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved