Quantum dot device technology on GaAs: DFB lasers, tunable lasers, and SOA’s

L. F. Lester; A. L. Gray; L. Zhang; T. C. Newell; R. Wang; F. Nabulsi; L. Olona; P. M. Varangis; Z. Bakonyi; G. Onishchukov; A. Tünnermann; H. Su; A. Stintz; J. Zou; K. J Malloy

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Technical Digest (Optica Publishing Group, 2003),
paper CTuH4

Quantum dot device technology on GaAs: DFB lasers, tunable lasers, and SOA’s

L. F. Lester, A. L. Gray, L. Zhang, T. C. Newell, R. Wang, F. Nabulsi, L. Olona, P. M. Varangis, Z. Bakonyi, G. Onishchukov, A. Tünnermann, H. Su, A. Stintz, J. Zou, and K. J Malloy

Conference on Lasers and Electro-Optics 2003

Baltimore, Maryland United States
1–6 June 2003
ISBN: 1-55752-733-4

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Longwavelength Lasers on GaAs (CTuH)

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L. F. Lester, A. L. Gray, L. Zhang, T. C. Newell, R. Wang, F. Nabulsi, L. Olona, P. M. Varangis, Z. Bakonyi, G. Onishchukov, A. Tünnermann, H. Su, A. Stintz, J. Zou, and K. J. Malloy, "Quantum dot device technology on GaAs: DFB lasers, tunable lasers, and SOA’s," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference, Technical Digest (Optica Publishing Group, 2003), paper CTuH4.

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Abstract

The characteristics of DFB lasers, external cavity tunable lasers, and semiconductor optical amplifiers are presented to demonstrate the versatility of GaAs-based quantum dot materials technology. For the DFB laser, a temperature-insensitive slope efficiency, low threshold, and feedback resistance are primary advantages. The external cavity tuned device has a 90 nm range, and the SOA demonstrates 18 dB gain and 9 ps gain recovery time.

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