Near-infrared Femtosecond Laser-Processed Thin-Film Transistor

Zun-Hao Chen; Jia-Min Shieh; Bau-Tong Dai; Yi-Chao Wang; Ci-Ling Pan

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2005),
paper CFG7

Near-infrared Femtosecond Laser-Processed Thin-Film Transistor

Zun-Hao Chen, Jia-Min Shieh, Bau-Tong Dai, Yi-Chao Wang, and Ci-Ling Pan

Conference on Lasers and Electro-Optics 2005

Baltimore, Maryland United States
22–27 May 2005
ISBN: 1-55752-770-9

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Ultrafast Laser Processing (CFG)

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Z. Chen, J. Shieh, B. Dai, Y. Wang, and C. Pan, "Near-infrared Femtosecond Laser-Processed Thin-Film Transistor," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2005), paper CFG7.

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Abstract

Near-infrared (800 nm wavelength) femtosecond laser annealing (FLA) is employed on crystallization and activation of amorphous Si regions of thin film transistors (TFT). The transfer, and output characteristics for FLA-processed TFTs show promising performances.

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