Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 2006 > CTuU > CTuU5
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CTuU5

Ge on Si by Novel Heteroepitaxy for High Efficiency Near Infrared Photodetection

Ali K. Okyay, Ammar M. Nayfeh, Krishna C. Saraswat, Ann Marshall, Paul C. McIntyre, and Takao Yonehara

Not Accessible

Your library or personal account may give you access

Abstract

We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85A/W at 1.55μm and 2V reverse bias, and exhibit reverse dark currents of 100mA/cm2 and external quantum efficiency up to 68%.

© 2006 Optical Society of America

PDF Article
More Like This
GHz Response of MSM InGaAs Photodetector on Si Substrate by BCB Bonding

Kazuaki MAEKITA, Takeo MARUYAMA, and Koichi IIYAMA
TuPM_2 OptoElectronics and Communications Conference and Photonics in Switching (OECC) 2013

Highly reliable and high speed InGaAs PIN photodetector on Si by heteroepitaxy

Bowen Song, Bei Shi, Si Zhu, Simone Šuran Brunelli, and Jonathan Klamkin
W1F.2 Asia Communications and Photonics Conference (ACP) 2021

A Novel Semiconductor-on-Metal MSM Photodetector Design for Dark Current Reduction

S. Mirbaha, R. N. Tait, S. P. McGarry, and N. G. Tarr
JTuB15 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2010

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use