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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper JTuA20

Sub-10nm Nanolithography and Direct Pattern Transfer on III-V Compound Semiconductor Using Sol-gel Derived ZrO2

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Abstract

A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm.

© 2008 Optical Society of America

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