160-Gb/s Broadband Wavelength Conversion on Chip Using Dispersion-Engineered Silicon Waveguides

Benjamin G. Lee; Aleksandr Biberman; Noam Ophir; Amy C. Turner-Foster; Mark A. Foster; Michal Lipson; Alexander L. Gaeta; Keren Bergman

doi:10.1364/CLEO.2009.CThBB1

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
OSA Technical Digest (CD) (Optica Publishing Group, 2009),
paper CThBB1
•https://doi.org/10.1364/CLEO.2009.CThBB1

160-Gb/s Broadband Wavelength Conversion on Chip Using Dispersion-Engineered Silicon Waveguides

Benjamin G. Lee, Aleksandr Biberman, Noam Ophir, Amy C. Turner-Foster, Mark A. Foster, Michal Lipson, Alexander L. Gaeta, and Keren Bergman

Conference on Lasers and Electro-Optics 2009

Baltimore, Maryland United States
31 May–5 June 2009
ISBN: 978-1-55752-869-8

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Nonlinear Nanophotonics and Data Conversion (CThBB)

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B. G. Lee, A. Biberman, N. Ophir, A. C. Turner-Foster, M. A. Foster, M. Lipson, A. L. Gaeta, and K. Bergman, "160-Gb/s Broadband Wavelength Conversion on Chip Using Dispersion-Engineered Silicon Waveguides," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optica Publishing Group, 2009), paper CThBB1.

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Abstract

We demonstrate 160-Gb/s wavelength conversion across 21 nm in the C-band using four-wave mixing in dispersion-engineered silicon photonic waveguides. Measurements show a conversion efficiency of −15.5 dB and a pulse broadening factor of 38%.

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