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Conferences > CLEO > 2009 > CTuF > CTuF3
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CTuF3
  • •https://doi.org/10.1364/CLEO.2009.CTuF3

Internal Quantum Efficiency and Non-radiative Recombination Coefficient of GaInN/GaN Multiple Quantum Wells with Different Dislocation Densities

Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas

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Abstract

Room-temperature photoluminescence measurements are performed on GaInN/GaN multiple quantum wells grown on GaN-on-sapphire templates with different threading-dislocation densities. The internal quantum efficiencies as a function of carrier concentration and the non-radiative coefficients are obtained.

© 2009 Optical Society of America

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