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Thin Film Silicon Solar Cell Fabricated at 100°C by High Density Plasma for Flexible Photovoltaic Application

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Abstract

Record fabrication temperature, 100°C, of a single junction amorphous Si solar cell was demonstrated by a high-density plasma method. Present solar cell revealed conversion efficiency of 7.4% at 200°C (4.1% at 135°C).

© 2010 Optical Society of America

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