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Below Bandgap Excitation of SnO2 Nanowires: The Relaxation of Trap States

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Abstract

Carrier relaxation of SnO2 nanowires is investigated by excitation at 3.2 eV, ~0.4 eV below the bandgap. The excited state transmission spectrum from 1.9-2.7 eV is intensity-dependent and recovers uniformly with a biexponential relaxation route.

© 2011 Optical Society of America

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