Abstract

The interest in quantum-confined optoelectronic devices has increased significantly in recent years. Specifically, saturable absorbers based on quantum-dot (QD) structures have been used in monolithic mode-locked semiconductor lasers (MMSL) for ultrashort pulse generation and these represent potential sources for data communications. To date, pulse widths of 400fs at 21 GHz from monolithic two-section devices have been reported¹, with the shortest pulses achieved at an elevated reverse bias of up to 10V. The switching times of electroabsorption devices are ultimately governed by the sweep-out time of photogenerated carriers.

© 2007 IEEE