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On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

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Abstract

The ABC model (without and with phase-space filling) predicts IQE-versus-n curves of GaInN light-emitting diodes that have even symmetry. Analysis of IQE-versus-n curves shows the need for a carrier leakage term to explain the droop.

© 2011 Optical Society of America

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