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Conferences > FiO > 2005 > SSuB > SSuB4

Device Characteristics of p-doped Regioregular Poly(alkylthiophene)-Based Field-Effect Transistors

Satoshi Hoshino, Manabu Yoshida, Sei Uemura, Takehito Kodzasa, and Toshihide Kamata

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Abstract

Field-effect transistors based on a regioregular poly(alkylthiophene) were studies for the effect of p-doped levels of the active layer. We found an appropriate doping range that improves field-effect mobility and on/off performance of the transistors.

© 2005 Optical Society of America

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