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Fabrication of AlN-GaN-AlN sub-micron waveguide with cleaved facets

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Abstract

Sub-micron waveguide fabrication in AlN-GaN-AlN is demonstrated. Improvement to sidewall verticality and reduced nanorod defects through optimized etching parameters are highlighted. Dice-and-cleave approach is adopted to achieve good end-facets.

© 2011 Optical Society of America

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