Abstract

Optical devices on Si substrate will be used for optoelectronic integrated circuits (OEICs) such as the interconnections for computer systems and subscriber systems. Long-wavelength InP-based devices on Si are promising for OEICs,¹⁾ though InP on Si has a high lattice mismatch of 8%. Photodiodes on Si have been shown to perform comparably to those on InP.²⁾ Cw stable operation has been demonstrated with a 1.5-pm laser on Si at room temperature³⁾, but for 1.3-pm lasers on Si, it has not been obtained. Though there are some reports on LDs on Si, the quality of those LDs is not yet comparable to ones on InP. And cw operation at higher temperature such as the 50 °C, employed in life tests, has not been reported, as far as we know.

© 1995 Optical Society of America