Optical Gain and Lasing in Ge-on-Si

Lionel Kimerling

doi:10.1364/IPRSN.2010.IMB2

Integrated Photonics Research, Silicon and Nanophotonics and Photonics in Switching
OSA Technical Digest (CD) (Optica Publishing Group, 2010),
paper IMB2
•https://doi.org/10.1364/IPRSN.2010.IMB2

Optical Gain and Lasing in Ge-on-Si

Lionel Kimerling

Integrated Photonics Research, Silicon and Nanophotonics 2010

Monterey, California United States
25–28 July 2010
ISBN: 978-1-55752-895-7

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CMOS-Compatible Laser Sources (IMB)

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L. Kimerling, "Optical Gain and Lasing in Ge-on-Si," in Integrated Photonics Research, Silicon and Nanophotonics and Photonics in Switching, OSA Technical Digest (CD) (Optica Publishing Group, 2010), paper IMB2.

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Abstract

Monolithic Ge-on-Si laser arrays are candidates for integrated, WDM optical power. Optical gain and lasing from the direct gap transition of band-engineered Ge-on-Si has been achieved using tensile strain and n-type doping. The edge-emitting laser device exhibits a gain spectrum of 1590-1610 nm. Article not available.

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