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Conferences > IPRSN > 2012 > IM3A > IM3A.4

Electrically Pumped Germanium-on-Silicon Laser

Rodolfo E. Camacho-Aguilera, Yan Cai, Neil Patel, Jonathan T. Bessette, Marco Romagnoli, Lionel C. Kimerling, and Jurgen Michel

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Abstract

Germanium lasing from Ge-on-Si pnn heterojunction diode structures is demonstrated. Selective growth of highly phosphorus doped Ge in oxide trenches shows a design for CMOS compatible laser integration.

© 2012 Optical Society of America

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