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High n-type doped germanium for electrically pumped Ge laser

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Abstract

We demonstrate an active phosphorous concentration of 4×1019 cm−3 in Ge by delta doping. Dopant enhanced diffusion is observed and modeled. Photoluminescence (PL) and electroluminescence (EL) confirm the high doping level with stronger emission.

© 2012 Optical Society of America

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