Abstract
We demonstrate an active phosphorous concentration of 4×1019 cm−3 in Ge by delta doping. Dopant enhanced diffusion is observed and modeled. Photoluminescence (PL) and electroluminescence (EL) confirm the high doping level with stronger emission.
© 2012 Optical Society of America
PDF ArticleMore Like This
Jonathan T. Bessette, Rodolfo Camacho-Aguilera, Yan Cai, Lionel C. Kimerling, and Jurgen Michel
ITuC5 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2011
Rodolfo E. Camacho-Aguilera, Yan Cai, Neil Patel, Jonathan T. Bessette, Marco Romagnoli, Lionel C. Kimerling, and Jurgen Michel
IM3A.4 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2012
Jurgen Michel, Rodolfo E. Camacho-Aguilera, Yan Cai, Neil Patel, Jonathan T. Bessette, Marco Romagnoli, Birendra (Raj) Dutt, and Lionel C. Kimerling
PDP5A.6 Optical Fiber Communication Conference (OFC) 2012