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Conferences > NANO > 2006 > NThC > NThC5

Enhanced Electroluminescence of Si-rich SiOx Based MOS Diode by Interfacial Precipitated Si Nano-pyramids

Chun-Jung Lin, Chi-Kuan Lin, and Gong-Ru Lin

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Abstract

The interfacial Si nano-pyramid-enhanced electroluminescence of an ITO/SiOx/p-Si/Al MOS diode is demonstrated with turn-on voltage, threshold current, output power, and lifetime of 50 V, 1.23 mA/cm2, 30 nW, and 10 hrs, respectively.

© 2006 Optical Society of America

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