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Conferences > OAA > 2004 > OMB > OMB4

1.3 µm GaInNAs Semiconductor Optical Amplifier

Jun-ichi Hashimoto, Kenji Koyama, Tsukuru Katsuyama, Yasuhiro Iguchi, Takashi Yamada, Shigenori Takagishi, Masashi Ito, and Akira Ishida

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Abstract

GaInNAs-SOA was investigated. The peak chip gain of 14dB and 3-dB gain bandwidth of 49 nm were realized. Small dependence of gain on temperature and good dynamic response to 40 Gbps optical pulses were obtained.

© 2004 Optical Society of America

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