Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Spectrally resolved white-light phase-shifting interference microscopy for thickness-profile measurements of transparent thin film layers on patterned substrates

Open Access Open Access

Abstract

We describe how spectrally-resolved white-light phase-shifting interference microscopy with a windowed 8-step algorithm can be used for rapid and accurate measurements of the thickness profile of transparent thin film layers with a wide range of thicknesses deposited upon patterned structures exhibiting steps and discontinuities. An advantage of this technique is that it can be implemented with readily available hardware.

©2006 Optical Society of America

Full Article  |  PDF Article
More Like This
Spectrally resolved phase-shifting interference microscopy: technique based on optical coherence tomography for profiling a transparent film on a patterned substrate

Sanjit K. Debnath, Seung-Woo Kim, Mahendra P. Kothiyal, and Parameswaran Hariharan
Appl. Opt. 49(34) 6624-6629 (2010)

Spectrally resolved phase-shifting interferometry of transparent thin films: sensitivity of thickness measurements

Sanjit K. Debnath, Mahendra P. Kothiyal, Joanna Schmit, and Parameswaran Hariharan
Appl. Opt. 45(34) 8636-8640 (2006)

Thin-film thickness profile and its refractive index measurements by dispersive white-light interferometry

Young-Sik Ghim and Seung-Woo Kim
Opt. Express 14(24) 11885-11891 (2006)

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1.
Fig. 1. Schematic of the spectrally-resolved phase-shifting interference profilometer.
Fig. 2.
Fig. 2. Cross section of a patterned surface with a transparent film deposited on it.
Fig. 3.
Fig. 3. Simulated phase ψ for a 1.5 µm SiO2 film on Si.
Fig. 4.
Fig. 4. Phase ϕ(x,σ) vs. wave number σ at a point on the surface for four Si samples with SiO2 films of different thicknesses.
Fig. 5.
Fig. 5. Line profiles of the top surface of the film and substrate.

Equations (6)

Equations on this page are rendered with MathJax. Learn more.

tam ϕ = I 1 5 I 2 + 11 I 3 + 15 I 4 15 I 5 11 I 6 + 5 I 7 + I 8 I 1 5 I 2 11 I 3 + 15 I 4 + 15 I 5 11 I 6 5 I 7 + I 8
I ( x , σ ) = I 0 ( x , σ ) [ 1 + V ( x , σ ) cos ϕ ( x , σ ) ]
ϕ ( x , σ ) = 4 π σ z ( x ) + ψ ( σ , x , d , n 2 ) ,
ϕ ( x , σ ) = 4 π σ z + 4 π n 2 σ d + ϕ nl
η ( z , d ) = [ ϕ mod el ( σ , z , d ) ϕ measured ( σ ) ] 2
( z + n 2 d ) = slope ( 4 π )
Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.