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Heterogeneous integration of electrically driven microdisk based laser sources for optical interconnects and photonic ICs

P. Rojo Romeo, J. Van Campenhout, P. Regreny, A. Kazmierczak, C. Seassal, X. Letartre, G. Hollinger, D. Van Thourhout, R. Baets, J.M. Fedeli, and L. Di Cioccio

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Abstract

A new approach for an electrically driven microlaser based on a microdisk transferred onto Silicon is proposed. The structure is based on a quaternary InGaAsP p-i-n junction including three InAsP quantum wells, on a thin membrane transferred onto silicon by molecular bonding. A p++/n++ tunnel junction is used as the p-type contact. The technological procedure is described and first experimental results show a laser emission in pulsed regime at room temperature, with a threshold current near 1.5 mA.

©2006 Optical Society of America

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Figures (6)
Fig. 1.
Fig. 1. Schematic description of an optical link in the framework of an above IC approach.

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Fig. 2.
Fig. 2. Description of the laser structure.

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Fig. 3.
Fig. 3. Membrane microdisk laser showing the bottom (left) and top (right) contacts.

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Fig. 4.
Fig. 4. Field maps (hz component) for 2 WGM, with and without contact slab.

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Fig.5.
Fig.5. IR image of a 8 μ m microdisk under electrical pulsed injection. The pulse duration is 6 ns at 3 MHz.. The pulse current value is 2.7 mA.

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Fig 6:
Fig 6: Spectral response , and P-I curve of the 1 μm thick 8 μm diameter microdisk under electrical pulsed injection. The pulse duration is 6 ns at 3 MHz..

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Tables (1)

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Table 1. Influence of the contact slab thickness on the resonant wavelength of 2 WGM.

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