Compact (0.7µmx20µm) germanium waveguide photodetector operating at 40Gbps is demonstrated. Monolithic integration of high-quality Ge-on-insulator single-crystalline layer into CMOS stack was achieved by lateral seeded crystallization during CMOS wells activation anneal above germanium melting temperature.
© 2009 Optical Society of America
S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, "CMOS-Integrated 40GHz Germanium Waveguide Photodetector for On-Chip Optical Interconnects," in Optical Fiber Communication Conference and National Fiber Optic Engineers Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper OMR4.