Abstract
Major concern for developing several megabit DRAMs is reduction of the cell size without decreasing the cell capacitance. For this purpose, various types of vertical capacitor cells, such as the Corrugated Capacitor Cell (CCC)/l/ and the Isolation-Merged Vertical Capcitor (IVEC) Cell/2/ have been proposed. With the increase in using the vertical processing, requirement for a novel method to measure the trench depth without cleaving the silicon wafer has been greatly increased. In this paper a new method for measuring the trench depth accurately without damaging the silicon wafer is presented using a Michelson interferometer and fibers.
© 1986 Optical Society of America
PDF ArticleMore Like This
Foo Cexiang, Gaurav Madan, Theresa Lai, Mark Wee, Y. Fu, and H.M. Shang
LOPETII320 Education and Training in Optics and Photonics (ETOP) 2001
Minori Noguchi, Tooru Ootsubo, and Susumu Aiuchi
MAA2 OSA Annual Meeting (FIO) 1990
R. M. A. Azzam
MZ1 OSA Annual Meeting (FIO) 1986