MBE grown InN: A novel THz emitter

Ricardo Ascázubi; Ingrid Wilke; Hai Lu; William J. Schaff

doi:10.1364/OTST.2005.MC6

Optical Terahertz Science and Technology
Technical Digest (CD) (Optica Publishing Group, 2005),
paper MC6
•https://doi.org/10.1364/OTST.2005.MC6

MBE grown InN: A novel THz emitter

Ricardo Ascázubi, Ingrid Wilke, Hai Lu, and William J. Schaff

Optical Terahertz Science and Technology 2005

Orlando, Florida United States
14–16 March 2005
ISBN: 1-55752-786-5

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R. Ascázubi, I. Wilke, H. Lu, and W. J. Schaff, "MBE grown InN: A novel THz emitter," in Optical Terahertz Science and Technology, Technical Digest (CD) (Optica Publishing Group, 2005), paper MC6.

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Abstract

Strong optically excited terahertz emission has been observed from InN thin films. The emission mechanism has been determined to be photocarrier acceleration. This observation implies that InN has a bandgap smaller than 1.5 eV.

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