Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper JTuD49

The study of InGaN SQW materials with Polarization Modulation SNOM

Not Accessible

Your library or personal account may give you access

Abstract

We investigate on the photoluminescence spatial unhomogeneities of InGaN/GaN interface with a Polarization Modulation Scanning Near-field Tunneling Microscope. We could demonstrate for the first time nanometer sized domains that present polarization-changing properties.

© 2006 Optical Society of America

PDF Article
More Like This
Time-Resolved Optical Studies of InGaN LED Structures Grown on Semipolar and Nonpolar Bulk GaN Substrates

Gregory A. Garrett, Hongen Shen, Michael Wraback, Anurag Tyagi, Mathew C. Schmidt, Zhongyuan Jia, James S. Speck, Steven P. DenBaars, and Shuji Nakamura
CMAA1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008

Optical and Material Studies of Indium Compositional Fluctuations in InGaN/GaN Quantum Well Structures

Shih-Wei Feng, Yen-Sheng Lin, Chi-Chih Liao, Kung-Jeng Ma, C. C. Yang, Chang-Cheng Chou, Chia-Ming Lee, and Jen-Inn Chyi
CMC3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2000

Spontaneous polarization effects on the optical properties of AlGaN/InGaN/GaN quantum wells

L. -H. Peng, K. -T. Hsu, C. -W. Shih, C. -C. Chuo, and J. -I. Chyi
WC1_3 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2001

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.