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Conferences > QELS > 2008 > JThA > JThA76
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper JThA76

Enhanced vertical extraction efficiency from a thin-film InGaN/GaN photonic crystal light-emitting diodes

Chun-Feng Lai, H. W. Huang, C. H. Lin, H. C. Kuo, T. C. Lu, S. C. Wang, and Chia-Hsin Chao

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Abstract

An InGaN/GaN thin-film light-emitting diode with the photonic crystal (PhC) on the surface and a TiO2/SiO2 omnidirectional reflector on the bottom was fabricated and found the line-width emission spectrum of 5 nm by the PhC.

© 2008 Optical Society of America

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