OSA's Digital Library

Optics InfoBase > Conference Papers > Solar > 2008 > SWC > Page SWC3 © 2008 OSA

Conference Paper
Solar Energy: New Materials and Nanostructured Devices for High Efficiency
Stanford, California United States
June 24-25, 2008
Poster Session II (SWC)

Photoconductivity in Si/SiO2Single Quantum Wells and Quantum Dot Layers

Bert Stegemann, Thomas Lussky, Andreas Schoepke, and Manfred Schmidt

http://dx.doi.org/10.1364/SOLAR.2008.SWC3


View Full Text Article

Acrobat PDF (603 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

The spectral dependence of photoconductivity in UHV prepared Si/SiO2 quantum wells and quantum dot layers is investigated and related to their respective structural properties. By hydrogen plasma passivation the internal yield of photoconductivity was improved.

© 2008 Optical Society of America

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(260.0260) Physical optics : Physical optics
(260.5150) Physical optics : Photoconductivity
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

Citation
B. Stegemann, T. Lussky, A. Schoepke, and M. Schmidt, "Photoconductivity in Si/SiO2Single Quantum Wells and Quantum Dot Layers," in Solar Energy: New Materials and Nanostructured Devices for High Efficiency, (Optical Society of America, 2008), paper SWC3.
http://www.opticsinfobase.org/abstract.cfm?URI=Solar-2008-SWC3


Sort:  Journal  |  Reset

References

References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited