Abstract
Si/SiO2 single quantum wells and quantum dot layers were prepared under ultrahigh vacuum conditions and studied with respect to possible photovoltaic applications. The detection of a photocurrent in such structures is demonstrated. Its spectral dependence correlates with the respective structural properties. Internal quantum efficiencies of photoconductivity and, thus, carrier mobilities and lifetimes, are strongly affected by Si/SiO2 interface states and were enhanced upon hydrogen treatment due to passivation of interface gap states.
© 2008 Optical Society of America
PDF ArticleMore Like This
S. Valdueza-Felip, F.B. Naranjo, M. González-Herráez, H. Fernández, J. Solis, F. Guillot, E. Monroy, M. Tchernycheva, L. Nevou, and F. H. Julián
ITuB7 Integrated Photonics and Nanophotonics Research and Applications (IPR) 2008
Yuh-Renn Wu, Yih-Yin Lin, and Jasprit Singh
JThA72 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008
E. D. Mishina, P. V. Elyutin, E. V. Malinnikova, A. N. Rubtsov, O. A. Aktsipetrov, W. de Jong, and Th. Rasing
QMD7 Quantum Electronics and Laser Science Conference (CLEO:FS) 1996