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Conference Paper
Solar Energy: New Materials and Nanostructured Devices for High Efficiency
Stanford, California United States
June 24-25, 2008
Poster Session II (SWC)

Photoconductivity in Si/SiO2Single Quantum Wells and Quantum Dot Layers

Bert Stegemann, Thomas Lussky, Andreas Schoepke, and Manfred Schmidt


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The spectral dependence of photoconductivity in UHV prepared Si/SiO2 quantum wells and quantum dot layers is investigated and related to their respective structural properties. By hydrogen plasma passivation the internal yield of photoconductivity was improved.

© 2008 Optical Society of America

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(260.0260) Physical optics : Physical optics
(260.5150) Physical optics : Photoconductivity
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

B. Stegemann, T. Lussky, A. Schoepke, and M. Schmidt, "Photoconductivity in Si/SiO2Single Quantum Wells and Quantum Dot Layers," in Solar Energy: New Materials and Nanostructured Devices for High Efficiency, (Optical Society of America, 2008), paper SWC3.

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