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Conferences > SumSession > 2011 > Th > Th23

Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si Substrate for Modulators

Xiaochi Chen, Yiwen Rong, Yijie Huo, Ed Fei, Xi Liu, Theodore I. Kamins, and James S. Harris

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Abstract

We investigate the growth and optical characterization of Ge/SiGe quantum wells on silicon substrate to exploit its strong quantum-confined Stark effect (QCSE) for electroabsorption modulator in long wavelength regime. Further, we design and fabricate devices based on this approach and investigate the high-speed modulation performance of the device.

© 2011 Optical Society of America

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