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Conferences > UEO > 1999 > UFB > UFB6

Ultrafast response of ErAs islands in GaAs

C. Kadow, J. P. Ibbetson, S. B. Fleischer, A. C. Gossard, and J. E. Bowers

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Abstract

ErAs islands in GaAs were grown by molecular beam epitaxy. The carrier dynamics were investigated by time resolved differential reflection measurements. The dynamics are strongly dependent on the microstructure, and decay times as short as 200 fs were observed.

© 1999 Optical Society of America

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